High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes


Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm2/V·s) with a high on/off ratio (106). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

By: Satria Zulkarnaen BisriJia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann, Maria Antonietta Loi

link: http://onlinelibrary.wiley.com/doi/10.1002/adma.201202699/abstract


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